NSG2065Q 250V 3 phase motor driver ic igbt mosfet

• Customization: Available
• Conductive Type: Bipolar Integrated Circuit
• Integration: GSI
• Model NO.: NSG2065Q
• Shape: DIP
• Technics: Semiconductor IC
• SPQ: 2500PCS
• MOQ: 2500PCS
• ODM/OEM: support
• Trial quantity: support
• Transport Package: by Carton
• Specification: silicone
• Trademark: NSIC
• Origin: China

Product Description

Description:

The NSG2065Q is a three-phase high-voltage power MOSFET and IGBT gate driver that can simultaneously drive the gate of both high-side and low-side power transistors. Its floating channel driver design accommodates bus voltages up to 250V. The NSG2065Q output provides significant driving capability, with output pull-up and pull-down currents reaching 1.2A/1.5A. The NSG2065Q operates over a wide voltage range, and both high-side and low-side gate drive voltages can be optimized for maximum driving efficiency. Internal shoot-through protection and dead-time circuitry prevent simultaneous conduction of the two transistors, further reducing switching losses. The NSG2065Q's undervoltage lockout function ensures that both driver outputs are low when the supply voltage is low. The NSG2065Q integrates a bootstrap diode, minimizing external circuitry requirements.

Features:
 

Bootstrap-operated floating channel
Maximum operating voltage up to 250 V
Gate drive voltage: 5V~20V
Compatible with 3.3V/5V input logic
dVs/dt immunity up to ±50 V/ns
Vs negative bias capability up to -9V
Input and output are in phase
Chip turn-on/turn-off delay:
Ton/Toff = 150ns/150ns - High/low side delay matching
Shoot-through protection
- Dead time: 200ns
High and low side undervoltage lockout circuit
- Undervoltage lockout positive threshold: 4.5V
- Undervoltage lockout negative threshold: 4.3V
Output pull/sink current capability: 1.2A/1.5A
Wide temperature range: -40~125°C
Integrated bootstrap diode
RoHS compliant
QFN24 package
 

Application

Motor drive