G2061Q 250V 1.5A Three-Phase High-Side/Low-Side Power MOSFET/IGBT Driver IC

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Product Details
Customization: Available
Conductive Type: Bipolar Integrated Circuit
Integration: GSI
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Year of Establishment
2006-08-08
Address
No. 8 Yanhe East Street, Ailingkan Village, Dalingshan Town, Dongguan, Guangdong, China
Registered Capital
12,500,000 RMB
  • G2061Q 250V 1.5A Three-Phase High-Side/Low-Side Power MOSFET/IGBT Driver IC
  • G2061Q 250V 1.5A Three-Phase High-Side/Low-Side Power MOSFET/IGBT Driver IC
  • G2061Q 250V 1.5A Three-Phase High-Side/Low-Side Power MOSFET/IGBT Driver IC
  • G2061Q 250V 1.5A Three-Phase High-Side/Low-Side Power MOSFET/IGBT Driver IC
  • G2061Q 250V 1.5A Three-Phase High-Side/Low-Side Power MOSFET/IGBT Driver IC
  • G2061Q 250V 1.5A Three-Phase High-Side/Low-Side Power MOSFET/IGBT Driver IC
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Basic Info.

Model NO.
G2061Q
Shape
DIP
Technics
Semiconductor IC
SPQ
2500PCS
MOQ
2500PCS
ODM/OEM
support
Trial quantity
support
Transport Package
by Carton
Specification
silicone
Trademark
NSIC
Origin
China

Product Description

Description:
The G2061Q is a high-voltage, high-speed power MOSFET high-side and low-side driver IC.  It utilizes a high-voltage and low-voltage compatible process, allowing for the integration of high-side and low-side gate driver circuits on a single chip. It features independent high-side and low-side reference output channels. The G2061Q's logic input levels are compatible with CMOS or LSTTL logic output levels as low as 3.3V, and the output has high current pulse capability and shoot-through protection logic. The G2061Q's floating channel can be used to drive high-side N-channel power MOSFETs, with a maximum floating ground voltage of up to 250V. The G2061Q is available in a QFN24 package and operates in a temperature range of -40ºC to 125ºC.


Features:
 
UBootstrap-operated floating ground channel
• Maximum operating voltage: +250V
• Compatible with 3.3V/5V input logic
• dVS/dt immunity up to ±50 V/ns
• Vs negative bias capability up to -9V
• Gate drive voltage range: 8V to 20V
• High and low side undervoltage lockout circuits
-- High-side undervoltage lockout positive threshold: 7.1V
-- High-side undervoltage lockout negative threshold: 6.9V
-- Low-side undervoltage lockout positive threshold: 7V
-- Low-side undervoltage lockout negative threshold: 6.6V
• Shoot-through prevention dead-time logic
-- Dead time setting: 200ns
• Chip propagation delay characteristics
-- Turn-on/turn-off propagation delay Ton/Toff = 150ns/120ns
-- Delay matching time less than 50ns
• Wide temperature range: -40~125°C
• Output stage source/sink current capability: 1.5A/1.8A
• RoHS compliant

 
Application
Motor Control
Air conditioners/washing machines
General-purpose inverters
Micro-inverter drives
 
 


G2061Q 250V 1.5A Three-Phase High-Side/Low-Side Power MOSFET/IGBT Driver ICG2061Q 250V 1.5A Three-Phase High-Side/Low-Side Power MOSFET/IGBT Driver ICG2061Q 250V 1.5A Three-Phase High-Side/Low-Side Power MOSFET/IGBT Driver ICG2061Q 250V 1.5A Three-Phase High-Side/Low-Side Power MOSFET/IGBT Driver ICG2061Q 250V 1.5A Three-Phase High-Side/Low-Side Power MOSFET/IGBT Driver IC

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