| Customization: | Available |
|---|---|
| Conductive Type: | Unipolar Integrated Circuit |
| Integration: | LSI |
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* General Description
SVF8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM structure VDMOS technology.
The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers
* Features
| 1. | 8A,600V,RDS(on)(typ.)=0.96@VGS=10V |
| 2. | Low gate charge |
| 3. | Low Crss |
| 4. | Fast switching |
| 5. | Improved dv/dt capability |
* Typical application schematic
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