4A 600V SVF4N60D/F/T/K/M/MJ Power Discrete Device MOSFET

• shape: DIP
• Conductive Type: Unipolar Integrated Circuit
• Integration: LSI
• Technics: Thin Film IC
• Application: Standard Generalized Integrated Circuit
• Type: Digital / Analog IC
• Model NO.: SVF4N60D/F/T/K/M/MJ
• Color: Black
• Transport Package: Carton
• Specification: AC 85-265V
• Trademark: Silan
• Origin: China
• HS Code: 8541290000

Product Description

-Data Sheet
 

* General Description

SVF4N60D/F/T/K/M/MJ  is  an  N-channel  enhancement  mode power MOS field effect transistor which is produced using Silan proprietary F-CellTMstructure VDMOS  technology.

The improved   planar  stripe   cell   and  the   improved   guard   ring terminal  have  been  especially   tailored  to  minimize  on-state resistance,   provide    superior   switching    performance,   and withstand high energy pulse in the avalanche and commutation mode.  

These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.


* Features
 

1.	4A, 600V, RDS(on)(typ.)=2.0@VGS=10V
2.	Low gate charge
3.	Low Crss
4.	Fast switching
5.	Improved dv/dt capability

 

* Typical application schematic
 

Why choose us?

* Specilaze in IC for around 14 years 
* 100% Tested before sale
* Cooperate with over 35 famous brands from domestic and international market
* Competitive and reasonable price 
* Abundant inventory and short lead time about 3-7 days
* 1 Year warranty
* 24hrs supports from our sales and R&D team




Notes

* The pictures are taken by camera.
* You can contact us for a better price.
* Feel free to contact us if you would like to see other models.