shape: | DIP |
---|---|
Conductive Type: | Unipolar Integrated Circuit |
Integration: | LSI |
Technics: | Thin Film IC |
Application: | Standard Generalized Integrated Circuit |
Type: | Digital / Analog IC |
Samples: |
---|
Customization: |
---|
Suppliers with verified business licenses
* General Description
SVF2N65F/N/MJ/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
* Features
1. | 2A,650V, RDS(on)(typ.)=4.3@VGS=10V Low gate charge |
2. | Low Crss |
3. | Fast switching |
4. | Improved dv/dt capability |
* Typical application schematic
Suppliers with verified business licenses