1A 600V SVF1N60A/M/MJ/B/D/F/H Power Discrete Device MOSFET

• shape: DIP
• Conductive Type: Unipolar Integrated Circuit
• Integration: LSI
• Technics: Thin Film IC
• Application: Standard Generalized Integrated Circuit
• Type: Digital / Analog IC
• Model NO.: SVF1N60A/M/MJ/B/D/F/H
• Color: Black
• Transport Package: Carton
• Specification: AC 85-265V
• Trademark: Silan
• Origin: China
• HS Code: 8541290000

Product Description

-Data Sheet
 

* General Description

SVF1N60AM/MJ/B/D/F/H is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary  F-CellTMstructure  VDMOS  technology.    
The improved   planar  stripe   cell   and  the   improved   guard   ring terminal  have  been  especially  tailored  to minimize  on-state resistance,   provide    superior   switching   performance,   and withstand high energy pulse in the avalanche and commutation mode.  

These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.


* Features

1.	1A,600V,RDS(on)(typ.)=6.8@VGS=10V
2.	Low gate charge
3.	Low Crss
4.	Fast switching
5.	Improved dv/dt capability

 

* Typical application schematic
 

Why choose us?

* Specilaze in IC for around 14 years 
* 100% Tested before sale
* Cooperate with over 35 famous brands from domestic and international market
* Competitive and reasonable price 
* Abundant inventory and short lead time about 3-7 days
* 1 Year warranty
* 24hrs supports from our sales and R&D team




Notes

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