electronic component VGS=10V Mosfet SVF3N80M/MJ/F/D/T

• Customization: Available
• Conductive Type: Unipolar Integrated Circuit
• Integration: LSI
• Model NO.: SVF3N80M/MJ/F/D/T
• Technics: Thin Film IC
• Color: Black
• shape: DIP
• Transport Package: Carton
• Specification: AC 85-265V
• Trademark: Chipown
• Origin: China
• HS Code: 8542399000
• Production Capacity: 10000000

Product Description

-Data Sheet
 

* General Description

SVF3N80M/MJ/F/D/T  is  an  N-channel   enhancement  mode power MOS field effect transistor which is produced using Silanproprietary  F-CellTM structure VDMOS  technology.    

The improved   planar  stripe   cell   and  the   improved   guard  ring terminal  have  been  especially   tailored  to  minimize  on-state resistance, provide  superior   switching performance,   and withstand high energy pulse in the avalanche and commutation mode.  

These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.




* Features

1.	2A,650V, RDS(on)(typ.)=4.3@VGS=10V Low gate charge
2.	Low Crss
3.	Fast switching
4.	Improved dv/dt capability

 

* Typical application schematic
 

Why choose us?

* Specilaze in IC for around 14 years 
* 100% Tested before sale
* Cooperate with over 35 famous brands from domestic and international market
* Competitive and reasonable price 
* Abundant inventory and short lead time about 3-7 days
* 1 Year warranty
* 24hrs supports from our sales and R&D team




Notes

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