shape: | DIP |
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Conductive Type: | Unipolar Integrated Circuit |
Integration: | LSI |
Technics: | Thin Film IC |
Color: | Black |
Transport Package: | Carton |
Samples: |
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Customization: |
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* General Description
SVF10N65T/F/K/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan
proprietary F-Cell TM structure VDMOS technology.
The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
* Features
1. | 10A,650V,RDS(on)(typ.)=0.96@VGS=10V Low gate charge |
2. | Low Crss |
3. | Fast switching |
4. | Improved dv/dt capability |
* Typical application schematic
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