7A 650V SVF7N65T/F/K/S Power Discrete Device MOSFET

• shape: DIP
• Conductive Type: Unipolar Integrated Circuit
• Integration: LSI
• Technics: Thin Film IC
• Application: Standard Generalized Integrated Circuit
• Type: Digital / Analog IC
• Model NO.: SVF7N65T/F/K/S
• Color: Black
• Transport Package: Carton
• Specification: AC 85-265V
• Trademark: Silan
• Origin: China
• HS Code: 8541290000

Product Description

-Data Sheet
 

* General Description

SVF7N65T/F/K/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.



* Features

1.	7A,650V, RDS(on)(typ.)=1.1@VGS=10V Low gate charge
2.	Low Crss
3.	Fast switching
4.	Improved dv/dt capability

 

 
* Typical application schematic












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