shape: | DIP |
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Conductive Type: | Unipolar Integrated Circuit |
Integration: | LSI |
Technics: | Thin Film IC |
Application: | Standard Generalized Integrated Circuit |
Type: | Digital / Analog IC |
Samples: |
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Customization: |
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* General Description
power MOS field effect transistor which is produced using SilanSVF2N60M/MJ/N/NF/F/T/D is an N-channel enhancement mode proprietary F-Cell structure VDMOS technology.
The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modeThese devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
* Features
1. | 2A,600V,RDS(on)(typ.)=3.7@VGS=10V |
2. | Low Crss |
3. | Fast switching |
4. | Low gate charge |
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