NCEP039N10M N-Channel Super Junction Power Mosfet Transistor

• Customization: Available
• Application: Power Electronic Components
• Batch Number: 2023+
• Model NO.: NCEP039N10M
• Certification: RoHS
• Manufacturing Technology: Discrete Device
• Material: Element Semiconductor
• Model: NCEP025F90T
• Package: DIP(Dual In-line Package)
• Signal Processing: Analog Digital Composite and Function
• Type: N-Type Semiconductor
• Applications: DC/DC Converter
• Channel: N-CHANNEL
• Transport Package: Carton
• Specification: TO-247-3L
• Trademark: NCE
• Origin: China
• HS Code: 8541290000
• Production Capacity: 500000

Product Description

Product Description

The series of devices uses Super Trench II technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination ofRDS(ON) and Qg. This device is ideal for high-frequency switchingand synchronous rectification.

General Features
 VDS =100V,ID =135A RDS(ON)=3.65mΩ , typical (TO-220)@VGS=10VRDS(ON)=3.5mΩ , typical (TO-263)@VGS=10V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
175 °C operating temperature
Pb-free lead plating
Pb-free Mold Compound
Model Selection Table

Model No.	Package	SPQ
NCEP039N10M	TO-220	/
NCEP039N10MD	TO-263	/