NCEP048NH150 N-Channel Super Junction Power Mosfet Transistor

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Product Details
Customization: Available
Application: Power Electronic Components
Batch Number: 2023+
Diamond Member Since 2020

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Year of Establishment
2006-08-08
Address
No. 8 Yanhe East Street, Ailingkan Village, Dalingshan Town, Dongguan, Guangdong, China
Registered Capital
12,500,000 RMB
  • NCEP048NH150 N-Channel Super Junction Power Mosfet Transistor
  • NCEP048NH150 N-Channel Super Junction Power Mosfet Transistor
  • NCEP048NH150 N-Channel Super Junction Power Mosfet Transistor
  • NCEP048NH150 N-Channel Super Junction Power Mosfet Transistor
  • NCEP048NH150 N-Channel Super Junction Power Mosfet Transistor
  • NCEP048NH150 N-Channel Super Junction Power Mosfet Transistor
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Basic Info.

Model NO.
NCEP048NH150
Certification
RoHS
Manufacturing Technology
Discrete Device
Material
Element Semiconductor
Model
NCEP025F90T
Package
DIP(Dual In-line Package)
Signal Processing
Analog Digital Composite and Function
Type
N-Type Semiconductor
Applications
DC/DC Converter
Channel
N-CHANNEL
Transport Package
Carton
Specification
TO-247-3L
Trademark
NCE
Origin
China
HS Code
8541290000
Production Capacity
500000

Product Description

NCEP048NH150 N-Channel Super Junction Power Mosfet TransistorProduct Description

DescriptionThe series of devices uses Super Trench III technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination ofRDS(ON) and Qg. This device is ideal for high-frequency switchingand synchronous rectification

General Features
VDS =150V,ID =175ARDS(ON)=3.9mΩ , typical @VGS=10V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
175 °C operating temperature
Pb-free lead plating

Model Selection Table

Model No. Package SPQ
NCEP048NH150 TO-220-3L /


 

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